to-92 plastic-encapsulate transistors KSA643 transistor (pnp) feature z collector dissipation z complement to ksd261 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = -100ua,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e = -10ua, i c =0 -5 v collector cut-off current i cbo v cb = -25 v , i e =0 -0.2 ua emitter cut-off current i ebo v eb = -3 v , i c =0 -0.2 ua dc current gain h fe * v ce = -1 v, i c = -100ma 40 400 collector-emitter saturation voltage v ce (sat)* i c = -500ma, i b =- 50ma -0.4 v base-emitter saturation voltage v be (sat)* i c = -500ma, i b =- 50ma -1.3 v * pulse test classification of h fe rank r o y g range 40-80 70-140 120-240 200-400 to-92 1. emitter 2. base 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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